VERY ENCOURAGING PROGRESS IN INCREASING THE OUTPUT POWER OF NEW MICROWAVE TRANSISTORS
VERY ENCOURAGING PROGRESS IN INCREASING the output power of new microwave transistors was reported by J.C. Zolper of the U.S. Office of Naval Research. For example, within the last three years there has been more than a 900% increase in power at X-band from high electron mobility transistors (HEMTs)...
Subscription Required
This content requires a subscription to one of the Aviation Week Intelligence Network (AWIN) bundles.
Schedule a demo today to find out how you can access this content and similar content related to your area of the global aviation industry.
Already an AWIN subscriber? Login
Did you know? Aviation Week has won top honors multiple times in the Jesse H. Neal National Business Journalism Awards, the business-to-business media equivalent of the Pulitzer Prizes.
Related Content
